Solaris 150

Our rapid thermal annealing furnaces are engineered for a wide range of semiconductor applications, including silicon and compound wafer annealing (RTA), rapid thermal oxidation (RTO), nitridation (RTN), and diffusion using spin-on dopants. Additional capabilities include crystallisation, contact alloying, and advanced phase modification to optimise material properties, interfaces, and stress profiles. Originally developed for ion implant anneal, RTP technology has evolved to support processes such as oxidation, silicide formation, and selected CVD steps. Offering fast ramp rates (typically 20–150 °C/sec) and precise control across processing temperatures from ~200 °C to 1300 °C, RTP enables high-throughput, multistage thermal cycles in a controlled gas environment — all within a single recipe.

Applications

• Ion Implant Activation
• Polysilicon Annealing
• BPSG/PSG Reflow
• Silicide Formation
• Ti/Au Nanotube Ohmic Contact Formation
• Contact Alloying
• Oxidation and Nitridation
• GaAs and III-V Ohmic Alloying

Features

• Sample sizes up to 6inch in diameter
• Small foot print
• Uniform heating, with lamps top and bottom of the sample        
• Stable and repeatable temperature control
• Temperature range up to 1200°C
• Zone temperature control for enhanced process control
• High purity quartz wafer holder and chamber
• Gold reflectors for fast heating rate
• Up to 6 mass flow controllers
• Quartz liner available for BPSG/PSG processing
• SIC coated graphite susceptor is available for compound semiconductor samples